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Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).

Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C

18:30 DS 23.1 Leakage current in high-k thin film capacitor stacks — •Herbert Schroeder
18:30 DS 23.2 Induced Ferroelectricity in Strained Epitaxial SrTiO3 Films on Various SubstratesEugen Hollmann, Jürgen Schubert, Rolf Kutzner, and •Roger Wördenweber
18:30 DS 23.3 Solvothermal sol-gel process for synthesis of Ba0.5Sr0.5TiO3 — •Dirk Spitzner, Emanuel Gutmann, Boris Mahltig, and Dirk C. Meyer
18:30 DS 23.4 Band gap determination of thin Praseodymiumoxide layers on Aluminiumoxynitride films — •Matthias Bergholz and Dieter Schmeißer
18:30 DS 23.5 X-ray photoemission spectroscopy of Aluminium Oxynitride on Si(001) and the rise as buffer layers — •Yevgen Burkov, Karsten Henkel, and Dieter Schmeißer
18:30 DS 23.6 Unified approach for the calculation of direct and Fowler-Nordheim tunneling current in multi-layered high-k gate dielectric stacks — •Mahyar Boostandoost, Ebrahim Nadimi, and Christian Radehaus
18:30 DS 23.7 Tunneling effective mass in ultrathin silicon oxynitride gate dielectrics — •Ebrahim Nadimi, Christian Golz, Martin Trentzsch, Lukas Herrman, Karsten Wieczorek, and Christian Radehaus
18:30 DS 23.8 Optical characterization of HfO2-based high-k gate stacks — •Martin Weisheit, René Hübner, Hans-Jürgen Engelmann, Inka Zienert, Susanne Ohsiek, Kornelia Dittmar, Michael Hecker, Martin Trentzsch, and Ehrenfried Zschech
18:30 DS 23.9 Diagnostics of electrical surface parameters using conductive and electrostatic force microscopy — •Teodor Gotszalk, Grzegorz Wielgoszewski, Ehrenfried Zschech, and I. W. Rangelow
18:30 DS 23.10 Fully depleted SOI-nMOSFETs with Gadolinium scandate as high-κ dielectric. — •M. Roeckerath, J. M. J. Lopes, T. Heeg, J. Schubert, and S. Mantl
18:30 DS 23.11 XRD/GIXRD studies of Praseodymium Oxide on Si(111) — •Andreas Greuling, Thomas Weisemöller, Carsten Deiter, Joachim Wollschläger, and Thomas Schröder
18:30 DS 23.12 In-situ ALD growth of Hafnium oxide films — •Konstantin Karavaev, Massimo Tallarida, Dieter Schmeisser, and Ehrenfried Zschech
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