Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).

DS 23.11: Poster

Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C

XRD/GIXRD studies of Praseodymium Oxide on Si(111) — •Andreas Greuling¹, Thomas Weisemöller¹, Carsten Deiter¹, Joachim Wollschläger¹, and Thomas Schröder² — ¹Universität Osnabrück, Barbarastr. 7, D-49069 Osnabrück, Germany — ²IHP-Microelectronics, Im Technologiepark 25, D-15236 Frankfurt(Oder), Germany

Praeseodymium sesquioxides (є ≈25) are well suited for epitaxy on Si based technologies since several crystalline phases are lattice matched to Si substrates. It is known that one can deposit metastable hexagonal Pr₂O₃ on Si(111)[1] which can be transformed to the cubic Pr₂O₃ phase due to annealing with a low oxygen pressure. Here, we present CTR-Analysis of thin Praseodymium Oxide films (5nm/10nm) on Si(111)[2]. The Praseodymium Oxide was deposited on Si(111) at 625^∘C. Following epitaxy the h-Pr₂O₃/Si(111) samples were annealed at 10⁵ Pa O₂. After that ex situ XRD and GIXRD experiments were performed at HASYLAB(DESY). We developed a simulation program which allows us to compute the intensity of a CTR using experimental data in order to fit the parameters of the underlying model. During our work we compared simulation runs of h-Pr₂O₃, c-Pr₂O₃ and PrO₂ on Si(111). Using our program for CTR-analysis we checked models with single phases and phase mixtures.

[1] H.J. Osten, J.P. Liu, E. Bugiel, H.J. Müssig, and P. Zaumseil, J. Cryst. Growth 235, 229 (2002).

[2] Samples were prepared at IHP.