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DS: Fachverband Dünne Schichten

DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).

DS 23.4: Poster

Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C

Band gap determination of thin Praseodymiumoxide layers on Aluminiumoxynitride films — •Matthias Bergholz and Dieter Schmeißer — Brandenburgische Technische Universität Cottbus, Angewandte Physik - Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany

High-k dielectrics are important as never bevore in semiconductor industry. We investigate Pr₂O₃ as one representative of this group on Silicon and Silicon-Aluminium oxynitride substrates. In earlier work we observed the positive influence of this AlO_xN_y intermediate layer on the electrical properties of the Pr₂O₃ layer. Now we present in-situ EELS, XPS and UPS measurements of gradually grown thin Pr₂O₃ on AlO_xN_y. From these measurements we determine the band structure and find a very fast change of the band gap for the first few Ångström, coupled with n-type behaviour for the Pr₂O₃ film. These results are compared with RIXS measurements of a 5 nm Pr₂O₃ on a 1 nm thick AlO_xN_y layer.