Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).

DS 23.5: Poster

Wednesday, February 27, 2008, 18:30–20:30, Poster C

X-ray photoemission spectroscopy of Aluminium Oxynitride on Si(001) and the rise as buffer layers — •Yevgen Burkov, Karsten Henkel, and Dieter Schmeißer — BTU Cottbus, Angewandte Physik - Sensorik, Konrad-Wachsmann-Allee 17, 03046 Cottbus, Germany

Praseodymium oxide (Pr_xO_y) is one of the candidate as high-k transistor gate dielectrics, but aluminium oxynitride (Al_xON_y) as buffer layer is needed to prevent diffusions from the silicon into Pr_xO_y and to hinder charge injection from the semiconductor into the insulator. The thermal stability and thickness dependence of aluminum oxynitride (Al_xON_y) has been investigated by synchrotron radiation photoemission spectroscopy (SR-PES). Al_xON_y layers were prepared by low energy ion-beam assisted deposition (LE-IBAD) at room temperature on a silicon substrate cleaned with HF-acid. Aluminium oxynitride is stable till 800^∘C. From photoemission spectra we can assess that silicon oxynitride is built as first and then the growth of Al_xON_y follows. Resonant inelastic X-ray scattering measurements with synchrotron radiation have been performed. The combination of X-ray absorption spectroscopy (XAS) and RIXS make possible to determinate the band gap of Al_xON_y.