Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).
DS 23.6: Poster
Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C
Unified approach for the calculation of direct and Fowler-Nordheim tunneling current in multi-layered high-k gate dielectric stacks — •Mahyar Boostandoost, Ebrahim Nadimi, and Christian Radehaus — Technische Universität Chemnitz Fakultät für Elektrotechnik und Informationstechnik Professur für Opto- und Festkörperelektronik 09107 Chemnitz
A quantum mechanical model is developed to compute the tunneling current in the p-MOSFET, with multi-layered high-k gate stacks. A unified approach is applied to the calculation of direct and Foweler-Nordheim tunneling regimes. The model uses self-consistent approach, based on a numerical solution of the coupled Schrödinger and Poisson equations and an open boundary condition at dielectric/gate interface. The tunneling current will be derived using the lifetime of electrons in the quasi-bound states. The gate tunneling current of different high-k stacks including HfO2, ZrO2, Si3N4 and an intefacilal SiO2 layer are compared. For a given equivalent oxide thickness, the gate leakage current decreases by increasing the high-k dielectric thickness or by decreasing the interlayer thickness. Crossing point in the I-V curves at high gate biases are observed for all gate stacks. We also investigate the influence of the effective mass on the tunneling current and presented the results considering different possible situations.