Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: High-k Dielectric Materials - Synthesis, Properties, Applications
The posters can also be presented at Poster A on Tuesday morning (DS poster session).
DS 23.7: Poster
Mittwoch, 27. Februar 2008, 18:30–20:30, Poster C
Tunneling effective mass in ultrathin silicon oxynitride gate dielectrics — •Ebrahim Nadimi1, Christian Golz2, Martin Trentzsch2, Lukas Herrman2, Karsten Wieczorek2, and Christian Radehaus1 — 1Technische Universität Chemnitz, Fakultät für Elektrotechnik und Informationstechnik, Reichenhainer Str. 70, D-09126 Chemnitz, Deutschland — 2AMD Saxony LLC & Co. KG, Wilschdorfer Landstraße 101, D-01109 Dresden, Deutschland
In this work we study the dependence of the tunneling effective mass of electrons on gate dielectric nitrogen concentration and thickness in metal-oxide-semiconductor field-effect-transistors (MOSFETs) with lightly doped silicon oxynitride (SiOxNy) gates. The dependences of the effective mass on nitrogen concentration and dielectric thickness are extracted by fitting the computation results for the gate leakage current to the experimental data measured by us for samples with different thicknesses and nitrogen concentrations. The direct tunneling current is modeled by applying a Schrödinger-Poisson solver with one-side-open boundary condition. Nitrogen concentration and thickness of samples are determined using X-Ray photoemission spectroscopy (XPS). The obtained results show a strong dependence of the effective mass on the sample thicknesses and nitrogen concentration. The electron effective mass is found to increase as the thickness decreases and the higher nitrogen concentration causes a reduction in effective mass.