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DS: Fachverband Dünne Schichten
DS 24: Trends in Ion Beam Technology: From the Fundamentals to the Application
DS 24.2: Hauptvortrag
Donnerstag, 28. Februar 2008, 10:00–10:30, H 2013
Low energy maskless implantation with high lateral resolution. — •Jan Meijer1, Sebastien Pezzagna1, Dirk Reuter2, Ivo W. Rangelow3, Hartmut Wiggers4, Fedor Jelezko5, Inam Mirza5, Jörg Wrachtrup5, Ferdinand Schmidt-Kaler6, Wolfgang Schnitzer6, and Kilian Singer6 — 1RUBION, Ruhr-Universität Bochum — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum — 3Mikro- und Nanoelektronische Systeme, TU-Ilmenau — 4Institut für Verbrennung und Gasdynamik, Universität Duisburg-Essen — 53. Physikalisches Institut, Universität Stuttgart — 6Quanteninformationsverarbeitung, Universität Ulm
The fabrication of scalable quantum computers based on solid state materials requires tools to manipulate and implant single atoms, clusters or molecules with nm resolution or below.
The technical requirements to meet this challenge are enormous. In the first approach, we will present a technology able to implant ions through an AFM-tip with a small hole. This technique is already realized in Bochum. It allows a maskless implantation of small structures using different types of ions and energies between 0.5 - 5 keV. In the second step, this method will be combined with an ion trap as a single ion source. This method will be developed at the University of Ulm. Calculations show that this enhancement offers the implantation of countable ions with a lateral resolution below one nm. The paper will give an overview of the status of these methods as well as the first results to apply single ion implantation in the fabrication of NV centres in diamond as a solid state room temperature qubit.