Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 25: Trends in Ion Beam Technology: From the Fundamentals to the Application

DS 25.6: Vortrag

Donnerstag, 28. Februar 2008, 12:30–12:45, H 2013

Ion beam induced effects at 15 K in z-cutLiNbO₃ — •Thomas Gischkat, Frank Schrempel, and Werner Wesch — Institut für Festkörperphysik,Friedrich-Schiller-Universität Jena

The primary effects of the damage formation in z-cut LiNbO₃ due to ion irradiation was investigated. Therefor the samples were irradiated stepwise and subsequently measured by means of Rutherford Backscattering Spectrometry (RBS) at 15 K without changing the temperature of the sample. The irradiation was done with 30 keV H-, 50 keV Li-, 160 keV O- and 350 keV Ar-ions at ion fluences between 5×10¹¹ cm⁻² and 2×10¹⁷ cm⁻². The RBS measurements were performed with 1.4 MeV He-ions in steps of equal charges providing a series of subspectra. It was observed that the backscattering yield of the damaged region decreases with increasing number of subspectra indicating an annealing of defects as a consequence of the RBS measurement. The energy deposited into electronic processes by the analyzing He beam is mostly responsible for the observed defect annealing. The amount of annealing depends on the defect concentration and the ion species. The undisturbed defect accumulation which will be observed without any effect of measurement was calculated for the different ion species by an analytical formula taking into account the He-beam induced annealing.