Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 28: Trends in Ion Beam Technology: From the Fundamentals to the Application
DS 28.1: Vortrag
Donnerstag, 28. Februar 2008, 16:15–16:30, H 2013
Epitaxial TiN film deposition at different substrate temperatures using hyperthermal titanium ions — •J. W. Gerlach, A. Wolfsteller, T. Höche, and B. Rauschenbach — Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstrasse 15, 04318 Leipzig
Conventional ion beam assisted deposition (IBAD) of binary nitrides, e.g. TiN, is usually done by evaporation of the metal component and simultaneous nitrogen ion irradiation of the growing film. In the literature, a lot of consequences of this ion irradiation during film growth are reported like densification, enlargement of the crystallite size, change of the preferred orientation, biaxial texturing of the films, and others. Contrary, in the present contribution the growth of thin TiN films by deposition of titanium ions, possessing hyperthermal energies of several ten eV, in a nitrogen ambient is investigated. These hyperthermal titanium ions were produced by a pulsed dc vacuum arc metal plasma source. The TiN films were deposited at substrate temperatures in the range from 700 ∘C down to room temperature on Al2O3(0001) and MgO(100) substrates. The surface structure of the films was monitored in situ by RHEED. The crystallographic structure and texture was investigated by XRD. High resolution TEM was used to examine the morphology and defect structure of the films. The results show that all the deposited TiN films are epitaxial, even at RT, indicating the beneficial effect of the hyperthermal energy of the particles involved in the deposition process. The influence of the hyperthermal titanium ion irradiation on the crystalline quality of the films is discussed.