Berlin 2008 – scientific programme
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DS: Fachverband Dünne Schichten
DS 28: Trends in Ion Beam Technology: From the Fundamentals to the Application
DS 28.2: Talk
Thursday, February 28, 2008, 16:30–16:45, H 2013
Ion beam synthesis of Mn/Sb clusters in silicon — •Michael Steinert1, Andreas Undisz2, Markus Rettenmayr2, and Werner Wesch1 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena — 2Institut für Materialwissenschaft und Werkstofftechnologie, Friedrich-Schiller-Universität Jena
Sequential ion implantation was used to incorporate Mn and Sb ions at high fluences of 1×1016 at/cm2 and 2×1016 at/cm2, respectively, into weak p-type Si (0 0 1). The implantation was performed at temperatures of 200 ∘C and 350 ∘C with energies of 180 keV (Mn) and 350 keV (Sb). Channeling-RBS measurements carried out before and after a subsequent thermal treatment via rapid thermal annealing (RTA) at temperatures from 950 ∘C to 1350 ∘C for 30 s indicate a strong temperature dependent redistribution of the implanted species during the annealing process governed by the radiation caused defects. An increase of the c-RBS backscattering yield of Sb in all annealed samples suggests the formation of Sb-based clusters. Additionally performed cross-sectional TEM analyses, including EDX measurements, clearly show the presence of hexagonal shaped elementary Sb precipitates as well as compound-clusters consisting of Mn and Sb, which are aligned to the crystal structure of the host silicon. High resolution TEM indicates different crystalline phases inside the observed particles, for the most part deviating in orientation and atomic plane distance from the Si-matrix.