Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 28: Trends in Ion Beam Technology: From the Fundamentals to the Application

DS 28.3: Talk

Thursday, February 28, 2008, 16:45–17:00, H 2013

Diffusion contrasts of Gold in Silicon induced by ion bombardment — Xiangzun Wang, •Moritz Trautvetter, Andreas Klimmer, and Paul Ziemann — Universität Ulm

As has been demonstrated previously, the diffusion of Au at 250°C is clearly enhanced in amorphous (a-)Si as compared to that in (001)-oriented Si wafers [1]. This effect can be exploited to 'write' diffusion contrast patterns by ion bombardment through a mask leading to the local formation of a-Si. In this way, after subsequent annealing at an optimized temperature, a selective diffusion of Au into the amorphized parts can be accomplished which then exhibit a drastically enhanced electrical conductivity. In the present contribution, the lateral selective diffusion of Au will be demonstrated starting from a Au-covered part of the Si wafer into uncovered but ion bombarded parts of Si. Such experiments allow determination of the electrical conductivity of the Au containing parts.

[1] J. Ehrhardt, A. Klimmer, J. Eisenmenger, Th. Müller, H.-G. Boyen, P. Ziemann:Influence of ion induced amorphicity on the diffusion of gold into silicon, J. Appl. Phys. 100, 063534 (2006)