Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Organic Thin Films

DS 3.2: Talk

Monday, February 25, 2008, 14:45–15:00, H 2013

In-situ growth studies of the organic semiconductors perfluoro-pentacene, pentacene, and diindenoperylene — •Stefan Kowarik¹, Alexander Gerlach¹, Alexander Hinderhofer¹, Frank Schreiber¹, Tushar Desai², Sukwon Hong², Aram Amassian², and James R. Engstrom² — ¹Universität Tübingen, Germany — ²Cornell University, Ithaca, USA

We present x-ray data from real-time and in-situ growth monitoring for the molecule perfluoro-pentacene (PFP, an n-type semiconductor) and compare it to real-time growth-data for the popular systems pentacene (PEN, p-type) and diindenoperylene (DIP, p-type). For organic molecular beam deposition (OMBD) of PFP we show that 3d-growth sets in after two monolayers , i.e. earlier than for PEN and DIP which exhibit favorable layer-by-layer growth up to four and eight monolayers, respectively. In comparison to PEN and DIP which can exhibit coexistence of crystal structures within the temperature range of 10 - 70 °C, we find the PFP film structure to be very similar to its bulk structure and not compromised by occurrence of phase coexistence. Extending the possibilities of OMBD through deposition at hyperthermal energies, we show for the example of DIP that supersonic deposition of molecules can increase the in-plane island size.