Berlin 2008 – scientific programme
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DS: Fachverband Dünne Schichten
DS 32: Metal and Amorphous Layers
DS 32.5: Talk
Thursday, February 28, 2008, 14:15–14:30, H 2032
Effect of the Si/SiO2 interface on oxygen diffusion in SiO2 — •Kirsten Sunder1, Hartmut Bracht1, Peter Fielitz2, and Günter Borchardt2 — 1Institute of Materials Physics, University of Münster, Germany — 2Institute of Metallurgy, Clausthal University of Technology, Germany
With down scaling of metal-oxide-semiconductor (MOS) transistors, the influence of the SiO2/Si interface on Si and O diffusion in SiO2 is becoming an important issue. The effect of defects generated at the interface on Si diffusion was investigated intensely by means of isotope heterostructures. It was concluded that SiO generated at the interface diffuses into the oxide and accelerates Si diffusion. The impact of these or different defects on O diffusion was not determined so far.
Performing diffusion experiments with Si3N4/SiO2/28Si18O2/28Si isotope heterostructures, that possess different thicknesses of the 28Si18O2 layer, the influence of the SiO2/Si interface on O diffusion in SiO2 was investigated.