Berlin 2008 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 41: Layer Deposition Processes

DS 41.1: Vortrag

Freitag, 29. Februar 2008, 14:30–14:45, H 2032

On the correlation between process parameters and deposition rate in High Power Pulsed Magnetron Sputtering (HPPMS) discharges — •Dominik Koehl and Matthias Wuttig — I. Institute of Physics IA, RWTH Aachen University

In recent years, High Power Pulsed Magnetron Sputtering (HPPMS) has increasingly attained the focus of actual research on modern sputter deposition techniques. Due to its potential to apply an extremely high peak power to the sputter target, it enables thin film deposition with a very high degree of ionization of the sputtered material. The generation of a large amount of low energy ions in the plasma facilitates the possibility to tailor film properties by ion bombardment in a very wide range. Several authors have demonstrated e.g. the deposition of metal films showing an increased mass density and reduced surface roughness compared to the respective dc-sputtered films. Despite these and other promising advantages of HPPMS, its application for large scale industrial processes is still limited. This is mainly due to the fact that the deposition rates in many cases are reported to be significantly smaller than in dcMS at identical average powers or currents, so that the energy efficiency of the process is considerably reduced. This finding has been correlated to self-sputtering and gas rarefaction, which in turn has been attributed to the very high peak current during the pulse. We present a study that facilitates the development of a more fundamental understanding of the deposition rate with respect to several process parameters.