Berlin 2008 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 41: Layer Deposition Processes
DS 41.6: Vortrag
Freitag, 29. Februar 2008, 15:45–16:00, H 2032
Preparation of CuInS2 chalcopyrite films by reactive magnetron sputtering: Influence of the Particle Energy on morphological, electrical and optical properties — •Stefan Seeger and Klaus Ellmer — Hahn-Meitner-Institut, Dep. Solar Energetics, Glienicker Str. 100, 14109 Berlin
Today magnetron sputtering is a common technique for large area depositions and already used to fabricate layers for thin film solar cells: the back contact (molybdenum) and front contact (zinc oxide) or for the deposition of metallic precursors. Nevertheless it is astonishing that this technique is not yet used for preparing the absorber layer in photovoltaic devices.
Recently we have demonstrated that reactive magnetron sputtering from an indium and a copper target in an Ar/H2S atmosphere is suited to prepare CuInS2 absorber films and solar cells with an efficiency of more than 10% in a one-step process without additional annealing procedures. In order to make full use of the advantages of a plasma-assisted deposition process:
i) deposition at lower temperatures compared to pure thermal processes,
ii) high chemical reactivity,
iii) compact and well adherent films,
we have investigated in this work the influence of the particle energies on the film growth and the electronic properties.