DS 41: Layer Deposition Processes
Freitag, 29. Februar 2008, 14:30–16:00, H 2032
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14:30 |
DS 41.1 |
On the correlation between process parameters and deposition rate in High Power Pulsed Magnetron Sputtering (HPPMS) discharges — •Dominik Koehl and Matthias Wuttig
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14:45 |
DS 41.2 |
Magnetoelectrodeposition of CoFe — •Koza Jakub, Uhlemann Margitta, Gebert Annett, and Schultz Ludwig
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15:00 |
DS 41.3 |
Interface roughness of MgO/Ti and ZrO2/Ti multilayers — •Tobias Liese, Andreas Meschede, and Hans-Ulrich Krebs
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15:15 |
DS 41.4 |
Investigation of the Nucleation and Growth Mechanisms of Nanocrystalline Diamond Films — •Christian Sippel, Cyril Popov, Wilhelm Kulisch, Dieter Grambole, and Johann Peter Reithmaier
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15:30 |
DS 41.5 |
Rapid metal-sulphide-induced crystallization of highly textured tungsten disulphide thin films. — •Stephan Brunken, Rainald Mientus, and Klaus Ellmer
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15:45 |
DS 41.6 |
Preparation of CuInS2 chalcopyrite films by reactive magnetron sputtering: Influence of the Particle Energy on morphological, electrical and optical properties — •Stefan Seeger and Klaus Ellmer
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