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DS: Fachverband Dünne Schichten
DS 42: Layer Growth: Evolution of Structure and Simulation
Freitag, 29. Februar 2008, 16:15–17:15, H 2032
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16:15 | DS 42.1 | Numerical simulation of demixing of a binary mixture on the solid substrate with a free surface — •Lubor Frastia and Len M. Pismen |
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16:30 | DS 42.2 | Molecular dynamics simulation study of the silicon carbide precipitation process — •Frank Zirkelbach, Jörg K. N. Lindner, Kai Nordlund, and Bernd Stritzker |
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16:45 | DS 42.3 | Monitoring quantum dot growth by in-situ cantilever systems — •yan wang, huiling duan, and joerg weissmueller |
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17:00 | DS 42.4 | Does ion beam divergence affect pattern formation by surface sputtering? — •Taha Yasseri, Emmanuel O. Yewande, Alexander K. Hartmann, and Reiner Kree |