Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 6: Semiconductor Nanophotonics: Materials, Models, Devices - High Speed Photonics

DS 6.1: Invited Talk

Monday, February 25, 2008, 09:30–10:15, H 2032

High Speed Nano-Photonics — •Gadi Eisenstein — Electrical Engineering Dept. Technion Haifa, Israel

Active optoelectronic devices based on nano structure gain media have the potential to completely revolutionize broad band communication applications.

In particular, quantum dot optical amplifiers and mode locked lasers make use of the extremely broad gain bandwidth of quantum dot material and enable numerous possibilities not possible with previous, lower dimensionality gain media.

This talk will survey the basic concepts governing those broad band properties and will present an overview of the state of art and predicted future performance.