Berlin 2008 – scientific programme

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DS: Fachverband Dünne Schichten

DS 8: Semiconductor Nanophotonics: Materials, Models, Devices - GaN based Photonics I: Polaritzation Fields

DS 8.3: Invited Talk

Monday, February 25, 2008, 15:15–15:45, H 2032

The optoelectronic chameleon - GaN-based light emitters from the UV to green — •Michael Kneissl — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10123 Berlin, Germany

Group III-nitrides have evolved into one of the most versatile and important semiconductor materials for optoelectronic devices. GaN-based blue, green and white light emitting diodes have already entered many parts of everyday life and violet lasers are expected to be following soon. However, considering the extraordinary electronic properties and the wide spectral range that is accessible through nitride materials, it appears that it we have just touched the tip of the iceberg. We will discuss some of the new fields of research for InAlGaN materials and devices and review progress in the development of near and deep ultraviolet light emitting diodes, as well as growth and optical properties of InN and indium rich InGaN alloys for emitter in the blue-green spectral range and beyond.