DS 9: Semiconductor Nanophotonics: Materials, Models, Devices - GaN based Photonics II
Montag, 25. Februar 2008, 16:00–17:15, H 2032
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16:00 |
DS 9.1 |
Hauptvortrag:
GaN-Photonics on Silicon — •Alois Krost
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16:30 |
DS 9.2 |
Analysis of the growth mechanisms for InGaN alloys in MOVPE — •Martin Leyer, J. Stellmach, M. Pristovsek, and M. Kneissl
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16:45 |
DS 9.3 |
MOVPE grown Indium Nitride Quantum Dots — •C. Meißner, S. Ploch, M. Pristovsek, and M. Kneissl
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17:00 |
DS 9.4 |
Recombination Kinetics of Localized Excitons in InGaN/GaN Quantum Dots — •Momme Winkelnkemper, Mattias Dworzak, Till Bartel, Axel Hoffmann, and Dieter Bimberg
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