Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 0: Tutorial: Graphene

HL 0.3: Tutorium

Sonntag, 24. Februar 2008, 16:00–17:00, ER 270

Epitaxial Graphene — •Thomas Seyller — Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen, Germany

Graphene, a single monolayer of sp²-bonded carbon, is a very unique 2-dimensional electron gas system with electronic properties fundamentally different to other 2DEG systems. Due to its peculiar band structure, charge carriers in graphene are described by the relativistic Dirac equation for massless particles. This results in extraordinary transport properties which have recently attracted considerable attention. From a practical point of view, the observation of e.g. large and robust carrier mobility and ballistic transport has raised the hope that graphene will find its way into application in electronic devices.

While many exciting results have been obtained with exfoliated graphene, technological applications demand methods suitable for producing large area graphene layers. The possibility to grow epitaxial graphene and ultra-thin graphite layers (so-called few layer graphene, FLG) on the basal plane surfaces of the wide band gap semiconductor silicon carbide (SiC) is a promising approach.

The 2-dimensional nature of epitaxial graphene and FLG layers make them an ideal subject for surface science methods such as photo electron spectroscopy (XPS, ARPES), scanning probe microscopy (AFM, STM), and electron diffraction (LEED). The presentation gives an overview over recent studies of epitaxial graphene and FLG layers on SiC surfaces covering their growth, electronic structure, and structural properties.