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HL: Fachverband Halbleiterphysik

HL 10: Preparation and characterization

HL 10.1: Vortrag

Montag, 25. Februar 2008, 09:30–09:45, EW 202

Defect cores investigated by x-ray scattering close to forbidden reflections in silicon — •Till H. Metzger¹, Marie-Ingrid Richard², Vaclav Holy³, and Kai Nordlund⁴ — ¹ESRF, Grenoble, France — ²ESRF/CEA, Grenoble, France — ³Charles University, Prague, Czech Republic — ⁴University of Helsinki, Finland

Characterizing the structure of point defects and dislocations and understanding their properties are of great importance in semiconductor technology. In silicon implantation, the interaction of defects and impurities play a crucial role in the doping of silicon. The most important extended defects observed in such systems are stacking faults, "311" defects and perfect dislocation loops. A new x-ray scattering method is presented making possible the detection of defects and the investigation of the structure of their cores. The method uses diffuse x-ray scattering measured close to the (200) forbidden diffraction peak, in which the intensity scattered from the distorted crystal lattice around the defects is minimized. As an example of this non-destructive method we demonstrate how the local compression of the extra {111} double planes in extrinsic stacking faults in Si can be probed and quantified using a continuum approach for the simulation of the core displacements. The experimental results are found to be in a very good agreement with atomistic simulations [1]. [1] M.I. Richard, T. H. Metzger, V. Holy and K. Nordlund, accepted for publication in Phys. Rev. Lett. 2007