HL 10: Preparation and characterization
Montag, 25. Februar 2008, 09:30–10:45, EW 202
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09:30 |
HL 10.1 |
Defect cores investigated by x-ray scattering close to forbidden reflections in silicon — •Till H. Metzger, Marie-Ingrid Richard, Vaclav Holy, and Kai Nordlund
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09:45 |
HL 10.2 |
Application of evolutionary strategies to the analysis of defects in semiconductors — •Silvia Schumann and Torsten Hahn
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10:00 |
HL 10.3 |
Probing the free charge carrier distribution with non-contact and contact AFM — •A.-D. Müller, F. Müller, S. Jänsch, C. Henkel, P. Pelzing, A. Möller, and H. Schmidt
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10:15 |
HL 10.4 |
Preparation and tunneling characteristics of MOS structures for Si-based IR light emitters — •Stephan Suckow, Martin Kittler, Winfried Seifert, Tzanimir Arguirov, Manfred Schmidt, Bert Stegemann, and Heike Angermann
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10:30 |
HL 10.5 |
Photoelectrochemical Formation and Shaping of Silicon Nanostructures Controlled by in-situ Brewster-Angle Reflectometry — •Michael Lublow and Hans-Joachim Lewerenz
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