Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 12: Photovoltaic
HL 12.1: Talk
Monday, February 25, 2008, 14:00–14:15, EW 202
Measurement of interstitial iron content in multicrystalline silicon by microwave detected photoconductance decay — •Kevin Lauer1,2, Abdelazize Laades1, Alexander Lawerenz1, Hartmut Übensee1, and Heinrich Metzner1 — 1CiS Institut für Mikrosensorik GmbH, SolarZentrum Erfurt, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany — 2Institut für Physik, TU-Ilmenau, Weimarer Str. 32, 98693 Ilmenau
A new approach to evaluate the photoconductance decay measured by microwave reflection in thin multicrystalline silicon wafers is presented. The minority carrier lifetime as a function of the excess carrier density is extracted from the photoconductance decay signal. We use this new approach to detect the interstitial iron content with a high spatial resolution. This is done by measurements in the two different states of the meta-stable iron-boron pairs. The limits of this method are discussed and it is shown to be applicable to thin and surface passivated multicrystalline silicon wafers with low minority carrier lifetime. A quantitative comparison to results obtained by means of quasi steady-state photoconductance measurements (QSSPC) is presented.