Berlin 2008 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 12: Photovoltaic

HL 12.8: Vortrag

Montag, 25. Februar 2008, 15:45–16:00, EW 202

Light-Beam Induced Current-investigations of Copper/Nickel - co-doped, wafer-bonded silicon bicristals — •Philipp Saring, Carsten Rudolf, Oliver Voß, Linda Stolze, and Michael Seibt — IV.Physikalisches Institut, Georg-August-Universität Göttingen, D-37077 Göttingen, Germany

Light Beam Induced Current (LBIC)-measurements were performed on samples of Czochralski-silicon, containing a small-angle grain boundary. This dislocation-network is visible on cross-section samples as a line with strong LBIC-contrast. Copper-doped samples exhibit precipitates with polyhedral structure and a strong contrast, whereas the Nickel-doped samples (same indiffusion conditions) do not reveal regions of such strong recombination activity. The samples, co-doped with Copper and Nickel, exhibit precipitates with LBIC-characteristics comparable to that in the Copper-samples. All samples containing precipitates show a higher concentration of them in one Wafer, probably due to the presence of oxygen related defects acting as nucleation sites. We greatfully acknowledge M. Reiche, Th. Wilhelm for providing bonded silicon wafers. This work was financially supported by Volkswagen foundation (SOBSI-Project).