Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 14: Heterostructures

HL 14.2: Vortrag

Montag, 25. Februar 2008, 09:45–10:00, ER 164

Growth and electrical characterization of c-BN/ZnO-heterostructures — •Marc Brötzmann, Hayo Zutz, Anne-Katrin Nix, Carsten Ronning, and Hans Hofsäss — II. Physikalisches Institut, Universität Göttingen, Germany

In this work we investigated the conduction mechanism of c-BN/ZnO-heterostuctures. For this purpose several c-BN-films with various thicknesses between 80nm and 250nm were grown on ZnO-substrates using Mass Separated Ion Beam Deposition (MSIBD). The parameters during deposition were 450eV substrate-bias and a temperature of 250-300°C. After deposition the BN-thin-films were characterized by in-situ XPS- and EELS as well as ex-situ FTIR-measurements followed by an electrical measurement of each sample. Furthermore, the structure of grown c-BN films was investigated by transmission-electron-microscope (TEM)-measurements. In addition the effect of photon-irradiation on the samples was investigated by performing several photo current measurements at various light intensities. We will discuss the effect of the layered structure of c-BN-thin-films on the conduction mechanism and the results of photo-current-measurements of the c-BN/ZnO-heterostuctures.