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09:30 |
HL 14.1 |
The initial growth stages of MBE Ge films on PrO2(111)/Si(111) support systems — •Alessandro Giussani, Olaf Seifarth, Peter Rodenbach, Hans-Joachim Müssig, Peter Zaumseil, Thomas Weisemöller, Carsten Deiter, Joachim Wollschläger, Peter Storck, and Thomas Schroeder
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09:45 |
HL 14.2 |
Growth and electrical characterization of c-BN/ZnO-heterostructures — •Marc Brötzmann, Hayo Zutz, Anne-Katrin Nix, Carsten Ronning, and Hans Hofsäss
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10:00 |
HL 14.3 |
Anisotropic light emission of single CdSe/CdS tetrapods due to asymmetric electron localization — •Thomas Limmer, Christian Mauser, Enrico Da Como, Andrey Rogach, Dmitri V. Talapin, and Jochen Feldmann
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10:15 |
HL 14.4 |
Tunneling spectroscopy of a p-i-n diode interface — Sebastian Loth, •Martin Wenderoth, Karen Teichmann, Jan Homoth, Karolin Löser, Rainer G. Ulbrich, Stefan Malzer, and Gottfried H. Döhler
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10:30 |
HL 14.5 |
PLD growth of ZnO resonators based on all-oxide Bragg reflectors — •Helena Hilmer, Jan Sellmann, Chris Sturm, Rüdiger Schmidt-Grund, Holger Hochmuth, Jesús Zúñiga Pérez, Gregor Zimmermann, Jörg Lenzner, Christian Czekalla, Gabriele Benndorf, Michael Lorenz, Bernd Rheinländer, Anatoli Serghei, and Marius Grundmann
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10:45 |
HL 14.6 |
Influence of barrier thickness on AlInN/AlN/GaN heterostructure properties — •Lars Rahimzadeh Khoshroo, Christof Mauder, Ian Booker, Wanjiao Zhang, Daniel Wamwangi, Herbert Horn-Solle, Joachim Woitok, Matthias Wuttig, Andrei Vescan, Michael Heuken, Holger Kalisch, and Rolf Jansen
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11:00 |
HL 14.7 |
MOVPE Wachstum und Charakterisierung von AlInN HFET Strukturen — •Christoph Hums, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Thomas Hempel, Hartmut Witte, Annette Diez, Jürgen Christen und Alois Krost
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