Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 15: Devices
HL 15.7: Vortrag
Montag, 25. Februar 2008, 12:45–13:00, ER 164
Electrical characterization of SONOS-structures for non-volatile memories — •Matthias Allardt1, Jörg Weber1, and Andreas Bemmann2 — 1Technische Universität Dresden, 01062 Dresden, Germany — 2X-FAB Dresden GmbH & Co. KG, 01109 Dresden, Germany
Silicon-oxide-nitride-oxide-silicon layers (SONOS) in the form of MOS-capacitors and MOS-transistors are investigated. The oxide/oxynitride films are deposited by chemical vapor deposition. Both the film thickness and the deposition parameters are varied. The devices are characterized by temperature- and time-dependent capacitance–voltage-measurements and current–voltage measurements. In particular, we have verified the memory effect of the structures. The data retention was studied to characterize the storage traps and to analyze the dominant discharge mechanism. The results show that the discharge depends almost logarithmically on time and is temperature-dependent. From our investigations it is evident that several mechanisms influence the discharge process. At present, only a qualitative characterization of the defects is possible.