HL 15: Devices
Montag, 25. Februar 2008, 11:15–13:00, ER 164
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11:15 |
HL 15.1 |
Disposable DotFET: Overlay requirements and the accuracy of E-Beam lithography on structures defined by optical lithography — •J. Moers, J. Gerharz, G. Mussler, L.K. Nanver, and D. Grützmacher
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11:30 |
HL 15.2 |
SnO2-nanostructures for gas sensing applications — •Alexandra Tischner, Anton Köck, Thomas Maier, Michael Kast, Christoph Stepper, Judith Januschewsky, Christian Edtmaier, Christian Gspan, and Gerald Kothleitner
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11:45 |
HL 15.3 |
Si-based vertical MOSFETs for high temperature applications — •Peter Iskra, Thomas Zilbauer, Dorota Kulaga-Egger, Martin Schlosser, Torsten Sulima, and Iganz Eisele
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12:00 |
HL 15.4 |
Carbon Nanotube Field-Effect Transistors Probed by — •Eduardo Lee, Kannan Balasubramanian, Marko Burghard, and Klaus Kern
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12:15 |
HL 15.5 |
Towards an electrically driven single photon source — •Christian Jendrysik, Roland Enzmann, Daniela Baierl, Christian Seidel, Andreas Heindl, Silvan Türkcan, Gerhard Böhm, Ralf Meyer, Jonathan Finley, and Markus-Christian Amann
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12:30 |
HL 15.6 |
InGaN MQW laser diodes with cleaved facets on sapphire and bulk GaN substrates — •J. R. van Look, S. Einfeldt, V. Hoffmann, A. Knauer, M. Weyers, and M. Kneissl
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12:45 |
HL 15.7 |
Electrical characterization of SONOS-structures for non-volatile memories — •Matthias Allardt, Jörg Weber, and Andreas Bemmann
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