Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 16: Quantum dots and wires: Optical properties I
HL 16.9: Talk
Monday, February 25, 2008, 16:15–16:30, ER 164
High-fidelity all-electrical preparation of spin-polarized electrons in single InAs quantum dots — •W. Löffler1,3, J. Müller1, H. Flügge1, C. Mauser1, S. Li2,3, T. Passow1,3, P. Aßhoff1,3, M. Hetterich1,3, and H. Kalt1,3 — 1Institut für Angewandte Physik, Universität Karlsruhe (TH) — 2Institut für Hochfrequenztechnik und Quantenelektronik, Universität Karlsruhe (TH) — 3DFG Center for Functional Nanostructures, CFN, D-76128 Karlsruhe, Germany
Electrical spin-injection devices provide a unique way to prepare spin-polarized electrons in many separated semiconductor quantum-dots at the same time. Using a semimagnetic spin-polarizer like ZnMnSe, the electron spin polarization can easily be prepared to unity. We have shown that these electrons can be injected into InAs quantum dots preserving the polarization. Here, we present recent investigations to enhance the spin-polarization at low magnetic fields and to study the temporal dynamics in these devices. We implemented and optimized the growth of high-quality ZnMnSSe spin-aligner layers and established time-resolved electroluminescence measurements.