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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.13: Poster

Montag, 25. Februar 2008, 16:30–19:00, Poster D

Towards growth on Si: Determining the offsets of Ga(N,As,P)/GaP MQW structures by optical spectroscopy — •Christian Karcher, Bernardette Kunert, Kerstin Volz, Wolfgang Stolz, and Wolfram Heimbrodt — Dept. Physics and Material Sciences Center, Philipps-University of Marburg, Germany

Realising a monolithic optoelectronic device on Si substrate such as an efficient direct laser material would open up completely new fields of applications. The indirect compound semiconductor GaP has a lattice constant almost equal to that of Si. The novel Ga(N,As,P) direct band-gap material can be grown pseudomorphically on GaP. We study these compressively strained Ga(N,As,P)/GaP MQWs by means of both temperature- and pressuredependent modulation- and photoluminescence-spectroscopy. By applying pressure upon the samples one is able to determine the offsets of the direct Ga(N,As,P)-bandgap with regard to the indirect bandgap of the GaP-barrier. We provide this insight by comparing the modulated reflectance to the photoluminescence of the sample. The obtained results yield additional knowledge about the band structure and in particular the offset of the quantum well, which is essential for achieving room-temperature lasing in the near future.