Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.18: Poster

Monday, February 25, 2008, 16:30–19:00, Poster D

Antilocalisation in InGaAs/InAlAs inverted 2DEGs — •Ines Hense, Ursula Wurstbauer, Dieter Schuh, and Werner Wegscheider — Universität Regensburg, Institut für Experimentelle und Angewandte Physik, 93043 Regensburg, Germany

InGaAs is one of the most studied ternary alloy systems because of its important rule in the development of electronic and optoelectronic devices. Due to a huge lattice missmatch between GaAs and InAs of about 7 % it is necessary to grow a some hundred nanometers thick buffer layer with a stepwise increasing In-concentration. In this way one creates a virtual substrate lattice-matched to InGaAs.

We present at low temperature magnetotransport experiments on 2DEGs which reside in an InAs-channel which was modulation-doped from the bottom side. One first finding was an increased magnetoconductance at low magnetic fields caused by weak antilocalisation. Following next will be an enhanced nanostructuring, e.g. to get Aharanov-Bohm rings or gate-defined quantum dots.