Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.37: Poster

Monday, February 25, 2008, 16:30–19:00, Poster D

Selective-area growth of III-V nanowires — •Hendrik Paetzelt¹, Volker Gottschalch¹, Jens Bauer¹, and Gerald Wagner² — ¹Institut für Anorganische Chemie, Universität Leipzig — ²Institut für Mineralogie, Kristallographie und Materialwissenschaft, Universität Leipzig

We present a catalyst-free approach for the growth of III-V semiconductor nanowires which is of interest to build ordered arrays of nanowires without the vapor-liquid-solid mechanism. The nanowires were grown from circular openings of a SiN_x mask on GaAs (111)B substrate using the selective-area metal-organic vapor phase epitaxy. The opening were defined by electron-beam lithography and wet chemical etching of the SiN_x-layer which was deposited using plasma enhanced chemical vapor deposition. We investigated the growth conditions (III/V-ratio, temperature, pressure, mask-openings, ...) for GaAs-, InAs- and InGaAs-nanowires. At optimized conditions extremely uniform arrays of semiconductor nanowires with diameters down to 50 nm were realized. The nanowires with a growth direction in [111]B direction showed a hexagonal cross-section and (110) facet sidewalls. The nanowires were characterized with cathodo-luminesenz and transmission electron microscopy.