Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.40: Poster

Monday, February 25, 2008, 16:30–19:00, Poster D

Test and characterisation of a self-built III-V molecular beam epitaxy system — •Kirill Trunov, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, D-44780 Bochum

A self-built three-chamber III-V molecular beam epitaxy (MBE) system with some non-conventional, low-cost technical and software solutions, such as ball bearing free cell- and window-shutter mechanisms is discussed. The first Si-doped Al_1−xGa_xAs/GaAs(100) heterostructures grown by this MBE system exhibit a Hall mobility exceeding 2.0×10⁶ cm²/Vs at 4.2 K after illumination with the corresponding carrier density of about 5.0×10¹¹ cm⁻². As further example for the performance of the system, first results for the growth of GaAs on Ge(100) substrate are discussed. Financial support from DFG GRK384 is gratefully acknowledged.