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HL: Fachverband Halbleiterphysik
HL 17: Poster I
HL 17.42: Poster
Montag, 25. Februar 2008, 16:30–19:00, Poster D
Manganese implanted GaAs films — •Danilo Bürger1, Heidemarie Schmidt1, Qingyu Xu1, Andreas Kolitsch1, Stephan Winnerl1, Harald Schneider1, Shengqiang Zhou1, Kay Potzger1, Manfred Helm1, Gisela Biehne2, and Volker Gottschalch3 — 1Forschungszentrum Dresden-Rossendorf e.V., Institut für Ionenstrahlphysik und Materialforschung — 2Universität Leipzig, Institut für Experimentelle Physik II — 3Universität Leipzig, Arbeitskreis Halbleiterchemie
Electron spin preservation has been proven in unmagnetic GaAs over several µm by time-resolved luminescence measurements [1]. The synthesis of Mn-alloyed GaAs has introduced a controllable spin degree of freedom in the GaAs device technology. Approx. 1 µm thick n-type (Si) and p-type (Zn) GaAs films have been grown on highly conducting n- and p-GaAs substrates by metalorganic chemical vapour deposition. For magnetotransport measurements reference samples have been grown on insulating substrates. Mn+ ion beam implantation with 300/150 keV at 200∘C yielded a boxlike Mn-implantation profile of the 250 nm thick GaAs surface layer with a nominal implantation dose dependent Mn content of 1 and 6 at%. Rapid thermal annealing has been performed at 650∘C for 10 s. Magnetic properties have been investigated by means of SQUID-magnetometry. The relation between concentration of free charge carriers, defect formation and magnetoresistance effects in manganese implanted GaAs will be discussed with respect to theoretically predicted double-exchange mechanisms.
[1] D. Hägele et al., Appl. Phys. Lett. 73, 1580 (1998)