Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.46: Poster

Montag, 25. Februar 2008, 16:30–19:00, Poster D

Temperature and doping dependent photon-recycling in GaInP-GaInAs double heterostructures — •Raymond Hoheisel, Wolfgang Guter, Simon Philipps, Frank Dimroth, and Andreas Bett — Fraunhofer Institut für Solare Energiesysteme, Heidenhofstrasse 2, 79110 Freiburg

The effect of photon recycling in GaInP-GaInAs heterostructures as a function of doping concentration, GaInAs layer thickness, temperature and total excitation intensity is presented. The radiative recombination process is investigated by an activated germanium substrate on which the GaInP-GaInAs heterostructures are grown. The photon recycling signal is measured by the Ge photodiode via spectral response from the upper layers. The experimental data show that the internal quantum efficiency of radiative recombination increases significantly with decreasing temperature. The influence of temperature dependent nonradiative recombination centers affecting the Shockley-Read-Hall (SRH) lifetime and the photon recycling signal is discussed.