Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.50: Poster

Monday, February 25, 2008, 16:30–19:00, Poster D

High temperature electron spin relaxation in bulk GaAs — •Stefan Oertel, Jens Hübner, and Michael Oestreich — Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstr. 2, 30167 Hannover

The electron spin relaxation in weakly n-doped bulk GaAs in the temperature range from 300K to 450K is determined by time and polarization resolved photoluminiscence spectroscopy with a synchroscan streakcamera. The spin relaxation is dominated by the D‘yakonov-Perel‘ relaxation mechanism in this temperature regime, leading to spin relaxation times between 60 and 10 ps. The influence of faster electron momentum scattering becomes explicitly apparent by examining the dependency of the spin relaxation time on the excitation density. The density dependency is studied by directly mapping the spatial density profile of the photoluminiscence on the streakcamera.