Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 17: Poster I
HL 17.52: Poster
Monday, February 25, 2008, 16:30–19:00, Poster D
Temporal evolution of gain and carrier dynamics of (GaIn)As/(GaIn)(NAs) heterostructures — •Niko Köster1, Christoph Lange1, Sangam Chatterjee1, Angela Thränhardt1, Bernadette Kunert1, Kerstin Volz1, Wolfgang Stolz1, Stephan Koch1, Wolfgang Rühle1, Galina Khitrova2, Hyatt Gibbs2, and Lutz Geelhaar3 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg — 2College of Optical Sciences, The University of Arizona, 1630 E University Blvd, Tucson, Arizona 85721 USA — 3Infineon Technologies, München, Germany
We present gain measurements of III-V semiconductor samples, both highly temporarily and spectrally resolved. The pump-probe Ti:Sapphire amplifier-driven setup features high excitation densities, a temporal resolution of below 200fs and a white-light supercontinuum probe. The latter, in combination with a spectrometer with a (GaIn)As photo-diode array, allows for the spectral resolution within one experimental run. The experimental spectra are compared with calculations based on a microscopic theory, which requires no free fit parameters. The good agreement underlines the predictive capability of the theory. Gain up to gL = 0.002 for (GaIn)As and gL = 0.003 for (GaIn)(NAs) per quantum well is observed, as well as numerous effects related to carrier dynamics such as feeding and hot carrier relaxation.