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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.52: Poster

Monday, February 25, 2008, 16:30–19:00, Poster D

Temporal evolution of gain and carrier dynamics of (GaIn)As/(GaIn)(NAs) heterostructures — •Niko Köster1, Christoph Lange1, Sangam Chatterjee1, Angela Thränhardt1, Bernadette Kunert1, Kerstin Volz1, Wolfgang Stolz1, Stephan Koch1, Wolfgang Rühle1, Galina Khitrova2, Hyatt Gibbs2, and Lutz Geelhaar31Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg — 2College of Optical Sciences, The University of Arizona, 1630 E University Blvd, Tucson, Arizona 85721 USA — 3Infineon Technologies, München, Germany

We present gain measurements of III-V semiconductor samples, both highly temporarily and spectrally resolved. The pump-probe Ti:Sapphire amplifier-driven setup features high excitation densities, a temporal resolution of below 200fs and a white-light supercontinuum probe. The latter, in combination with a spectrometer with a (GaIn)As photo-diode array, allows for the spectral resolution within one experimental run. The experimental spectra are compared with calculations based on a microscopic theory, which requires no free fit parameters. The good agreement underlines the predictive capability of the theory. Gain up to gL = 0.002 for (GaIn)As and gL = 0.003 for (GaIn)(NAs) per quantum well is observed, as well as numerous effects related to carrier dynamics such as feeding and hot carrier relaxation.

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