Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

HL 17.8: Poster

Montag, 25. Februar 2008, 16:30–19:00, Poster D

Transport through multilayer graphene — •Thomas Lüdtke, Patrick Barthold, and Rolf J. Haug — Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover

We present transport measurements through thin films of graphite in dependence of backgate voltage and temperature.
The thin films of graphite are obtained by micromechanical cleavage of natural graphite similar to the technique described in Ref.[1]. An optical microscope is used to localize the graphite films that are deposited on a silicon substrate with 300nm SiO₂ layer. By using electron beam lithography we are able to contact the samples. Transport measurements were performed at temperatures between 1.4 K and 300 K. As we apply a backgate voltage we see a peak in the resistivity that we contribute to a field effect. In addition to transport measurements on flakes we present measurements on mesoscopically patterned devices.

[1] K. S. Novoselov et al., Proc. Natl. Acad. Sci. USA, vol. 102, p.10451 (2005)