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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 17: Poster I

Monday, February 25, 2008, 16:30–19:00, Poster D

16:30 HL 17.1 Infrared spectroscopy on the fullerene C70 under pressure — •Komalavalli Thirunavukkuarasu, Christine.A. Kuntscher, Ferenc Borondics, Gyöngyi Klupp, and Katalin Kamarás
16:30 HL 17.2 Ionization potentials of the first members of the nanodiamond series — •Lasse Landt, Kathrin Klünder, Konstantin Lenzke, Trevor Willey, Tony van Buuren, Jeremy Dahl, Robert Carlson, Thomas Möller, and Christoph Bostedt
16:30 HL 17.3 Fibre reinforced carbon aerogels for application as electrochemical double layer capacitors — •Henning Lorrmann, Volker Lorrmann, Ingo Riedel, Carsten Deibel, Gudrun Reichenauer, Matthias Wiener, and Vladimir Dyakonov
16:30 HL 17.4 Non-Oriented and Oriented Protein Immobilization on Diamond SurfacesSimon Quartus Lud, •Philipp Sebastian Koch, Florian Spirkl, Rainer Jordan, Paola Bruno, Dieter M. Gruen, Jose A. Garrido, and Martin Stutzmann
16:30 HL 17.5 Selective growth and treatment of carbon nanotubes on various substrates — •Philipp Zeigermann, Hans Kleemann, Manuela Janietz, Mathias Steglich, and Bernd Schröter
16:30 HL 17.6 Morphology of graphene layers deposited on various substrates — •Ulrich Stöberl, Jonathan Eroms, Ursula Wurstbauer, Werner Wegscheider, and Dieter Weiss
16:30 HL 17.7 Untersuchung von Graphenschichten auf Siliziumkarbid mit Hilfe der Ramanspektroskopie — •Jonas Röhrl, Martin Hundhausen, Ralf Graupner, Konstantin Emtsev, Thomas Seyller und Lothar Ley
16:30 HL 17.8 Transport through multilayer graphene — •Thomas Lüdtke, Patrick Barthold, and Rolf J. Haug
16:30 HL 17.9 Transport in antidot lattices in graphene layers — •Jonathan Eroms, Ulrich Stöberl, and Dieter Weiss
16:30 HL 17.10 THz detectors on the basis of HgTe-Quantum wells — •Fathi Gouider, Hartmut Buhman, Christoph Brüne, Günter Hein, and Georg Nachtwei
16:30 HL 17.11 Photovoltage Induced by Microwave Radiation on AlGaAs/GaAs Hall Bars — •Tobias Krohn, Nikolai Mecking, André Wirthmann, and Detlef Heitmann
16:30 HL 17.12 FIR and MW Spectroscopy on Carbon-Doped Two-Dimensional Hole Systems — •Kevin Rachor, Thomas Raab, Carsten Graf von Westarp, Detlef Heitmann, Andrea Stemmann, Christian Heyn, Christian Gerl, Werner Wegscheider, Dirk Reuter, and Andreas Wieck
16:30 HL 17.13 Towards growth on Si: Determining the offsets of Ga(N,As,P)/GaP MQW structures by optical spectroscopy — •Christian Karcher, Bernardette Kunert, Kerstin Volz, Wolfgang Stolz, and Wolfram Heimbrodt
16:30 HL 17.14 Influence of sulfur on the polarization degree in spin-injection light-emitting diodes with lattice-matched ZnMnSSe spin aligners — •Jens Müller, Wolfgang Löffler, Benedikt Westenfelder, Heinz Kalt, Dongzhi Hu, Daniel M. Schaadt, and Michael Hetterich
16:30 HL 17.15 High Resolution Measurement of the Thermal Expansion Coefficient of Semiconductor Multilayer Lateral Nanostructures — •björn brüser, ullrich pietsch, souren grigorian, tobias panzner, jörg grenzer, and ute zeimer
16:30 HL 17.16 Crystallization of strongly correlated indirect excitons — •Patrick Ludwig, Alexej Filinov, Heinrich Stolz, and Michael Bonitz
16:30 HL 17.17 Epitaxially grown ZnO heterostructures for nanophotonic devices — •Marcel Ruth and Cedrik Meier
16:30 HL 17.18 Antilocalisation in InGaAs/InAlAs inverted 2DEGs — •Ines Hense, Ursula Wurstbauer, Dieter Schuh, and Werner Wegscheider
16:30 HL 17.19 Structural and optical properties of ZrO2 and Al2O3 thin films and Bragg reflectors grown by pulsed laser deposition — •Jan Sellmann, Chris Sturm, Rüdiger Schmidt-Grund, Helena Hilmer, Holger Hochmuth, Christian Czekalla, Michael Lorenz, and Marius Grundmann
16:30 HL 17.20 Characterization of GaSb-based heterostructures by spectroscopic investigations — •Sebastian Imhof, Christina Bückers, Björn Metzger, Angela Thränhardt, Sangam Chatterjee, and Stephan W. Koch
16:30 HL 17.21 Development of Photonic Sensors for Parallel Molecule Detection Based on Microresonators — •Mario Hauser, Christian Sailer, Cristian Gohn, Christian Schäfer, Wolfgang Löffler, and Heinz Kalt
16:30 HL 17.22 Gain measurements of violet and blue InGaN lasers using the variable stripe length method — •J. Schlegel, J. R. van Look, V. Hoffmann, A. Knauer, S. Einfeldt, P. Vogt, M. Weyers, and M. Kneissl
16:30 HL 17.23 Investigations of the ability of photovoltaic solar power generators to receive RF radiation — •Markus Drapalik and Viktor Schlosser
16:30 HL 17.24 Modellbasierte Optimierung von III-V Solarzellen — •Simon P. Philipps, Martin Hermle, Wolfgang Guter, Frank Dimroth und Andreas W. Bett
16:30 HL 17.25 Composition Dependence of Defects in CuIn1-xGaxSe2 Solar Cells — •Tobias Eisenbarth, Thomas Unold, Christian Kaufmann, Raquel Caballero, Daniel Abou-Ras, and Hans-Werner Schock
16:30 HL 17.26 Deep level transient spectroscopy measurements on CuInS2-thin film solar cells — •Stephanie Malek, Martin Knipper, and Jürgen Parisi
16:30 HL 17.27 Correlations of the structural and electrical characteristics of magnetron-sputtered ZnO:Al- and Molybdenum thin films — •Jennifer Heinemann, Ingo Riedel, Frank Hergert, and Jürgen Parisi
16:30 HL 17.28 Modelling of spectral photoluminescence yields from Cu(In1−xGax)Se2 thin film absorber — •Sebastian Knabe, Levent Gütay, and Gottfried Heinrich Bauer
16:30 HL 17.29 Local Fluctuations of Absorber Properties of Cu(In,Ga)Se2 for ”Real Life” Conditions by Sub-Micron Resolved PL — •Levent Gütay and Gottfried H. Bauer
16:30 HL 17.30 Spatially resolved photoluminescence measurements on Cu(In,Ga)Se2 absorbers and their analysis by Fourier transforms and Minkowski-operations — •Florian Heidemann, Levent Gütay, Matthias Langenmeyer, and Gottfried H. Bauer
16:30 HL 17.31 Co-Sputtering of (Zn,Mg)O buffer layers on CIGSSe thin film solar cells — •Felix Erfurth, Benjamin Hußmann, Thomas Niesen, Jörg Palm, Alexander Grimm, Achim Schöll, and Eberhard Umbach
16:30 HL 17.32 Correlation of grain structure and electrical properties of Cu(In,Ga)Se2 thin-film solar cells — •Melanie Nichterwitz, Daniel Abou-Ras, Jürgen Bundesmann, Roland Scheer, and Hans-Werner Schock
16:30 HL 17.33 Lateral Inhomogeneities in CuInS2-Thin Film Absorbers by Confocal Optical and Spectroscopic Analyses With µ m-Lateral Resolution — •Martin Suhlmann, Sebastian Meier, Levent Gütay, Alexander Meeder, Rudolf Brüggemann, and Gottfried H. Bauer
16:30 HL 17.34 InGaAsP/InGaAs tandem solar cells for higher conversion efficiencies in multi-junction solar cells — •Ulf Seidel, Erol Sagol, Nadine Szabó, Klaus Schwarzburg, and Thomas Hannappel
16:30 HL 17.35 Properties of the crystal lattice and electronic structure of metastable III(N,V) semiconductors — •Martin Güngerich, Gerhard Weiser, Wolfram Heimbrodt, Oleg Rubel, Peter J. Klar, Paul Harmer, Mark P. Jackson, and Matthew P. Halsall
16:30 HL 17.36 Homo- and heteroepitaxial growth behavior of upright InAs nanowires on InAs and GaAs substrates — •Jens Bauer, Volker Gottschalch, Hendrik Paetzelt, Gerald Wagner, and Ulrich Pietsch
16:30 HL 17.37 Selective-area growth of III-V nanowires — •Hendrik Paetzelt, Volker Gottschalch, Jens Bauer, and Gerald Wagner
16:30 HL 17.38 Switching the Charge of a Single Mn-Dopant in InAs with the STM in Experiment and Model — •Felix Marczinowski, Focko Meier, Jens Wiebe, and Roland Wiesendanger
16:30 HL 17.39 Photoluminescence and ultrafast spectroscopy on diffusion barriers between GaAs quantum wells and GaMnAs layer — •R. Schulz, A. Wagner, T. Korn, U. Wurstbauer, D. Schuh, W. Wegscheider, and C. Schüller
16:30 HL 17.40 Test and characterisation of a self-built III-V molecular beam epitaxy system — •Kirill Trunov, Dirk Reuter, and Andreas D. Wieck
16:30 HL 17.41 High mobility GaN based 2DEG heterostructures by MBE — •D. Broxtermann, M. Sivis, A. Bedoya Pinto, J. Malindretos, and A. Rizzi
16:30 HL 17.42 Manganese implanted GaAs films — •Danilo Bürger, Heidemarie Schmidt, Qingyu Xu, Andreas Kolitsch, Stephan Winnerl, Harald Schneider, Shengqiang Zhou, Kay Potzger, Manfred Helm, Gisela Biehne, and Volker Gottschalch
16:30 HL 17.43 Post growth annealing behaviour and carrier concentration of Ga1−xMnxAs grown on (001), (311) and (110) GaAs substrates — •Michael Hirmer, Ursula Wustbauer, Dieter Schuh, and Werner Wegscheider
16:30 HL 17.44 Growth of InN and InGaN/InN heterostructures for electronic device applications — •Joerg Hisek, Heiko Bremers, Uwe Rossow, Jochen Aderhold, Juergen Graul, and Andreas Hangleiter
16:30 HL 17.45 Influences of growth conditions on surface properties of MBE grown InN films — •Anja Eisenhardt, Marcel Himmerlich, Juergen A. Schaefer, and Stefan Krischok
16:30 HL 17.46 Temperature and doping dependent photon-recycling in GaInP-GaInAs double heterostructures — •Raymond Hoheisel, Wolfgang Guter, Simon Philipps, Frank Dimroth, and Andreas Bett
16:30 HL 17.47 Minimierung von seriellen Widerstandsverlusten in Solarzellen mit Hilfe von SPICE-Netzwerksimulation — •Marc Steiner, Simon Philipps, Martin Hermle, Frank Dimroth und Andreas Bett
16:30 HL 17.48 Doping Concentration Measurement by Spatially Resolved Spin Noise Spectroscopy — •Michael Römer, Jens Hübner, and Michael Oestreich
16:30 HL 17.49 Optical investigation of doped and undoped AlN layers — •Günther M. Prinz, Ingo Tischer, Martin Schirra, Martin Feneberg, Sarad B. Thapa, Ferdinand Scholz, Yoshitaka Taniyasu, Makoto Kasu, Rolf Sauer, and Klaus Thonke
16:30 HL 17.50 High temperature electron spin relaxation in bulk GaAs — •Stefan Oertel, Jens Hübner, and Michael Oestreich
16:30 HL 17.51 Optical gain in Ga(NAsP) quantum wells using the variable stripe-length method — •Daniel Franzbach, Christoph Lange, Michael Schwalm, Sangam Chatterjee, Bernadette Kunert, Kerstin Volz, Wolfgang Stolz, and Wolfgang Rühle
16:30 HL 17.52 Temporal evolution of gain and carrier dynamics of (GaIn)As/(GaIn)(NAs) heterostructures — •Niko Köster, Christoph Lange, Sangam Chatterjee, Angela Thränhardt, Bernadette Kunert, Kerstin Volz, Wolfgang Stolz, Stephan Koch, Wolfgang Rühle, Galina Khitrova, Hyatt Gibbs, and Lutz Geelhaar
16:30 HL 17.53 Einfluss der Schichtdicke von GaMnAs auf die Curietemperatur und die Magnetotransporteigenschaften — •Matthias Schmidt, Florian Adler, Andrea Stemmann, Christian Heyn und Wolfgang Hansen
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