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HL: Fachverband Halbleiterphysik
HL 21: Symposium Semiconductor Nanowires
HL 21.1: Hauptvortrag
Dienstag, 26. Februar 2008, 15:15–15:45, ER 270
Electron Transport in InAs Nanowire Quantum Dots — •Andreas Fuhrer1,2, Carina Fasth1, and Lars Samuelson1 — 1The Nanometer Structure Consortium, Lund Universtity, Box 118, S-221 00 Lund, Sweden — 2School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
We investigate electron transport in single [1,2] and double quantum dots [3-5] defined in catalytically grown InAs nanowires containing down to a single electron. We determine g-factor [1] and strength of the spin-orbit interaction [2] directly from excited state measurements in these few electron quantum dots. Using local gates to deplete homogeneous InAs nanowires offers a high degree of tunability for defining double quantum dots [2]. Here we show that such systems are ideally suited to manipulate single spins and charges for electron pumping [4], charge read-out [5] and spin manipulation applications.
[1] M. T. Björk, A. Fuhrer, et al. Phys. Rev. B 72, 201307 (2005)
[2] C. Fasth, A. Fuhrer, et al. Phys. Rev. Lett. 98, 266801 (2007)
[3] C. Fasth, A. Fuhrer, et al. Nano Letters 5, 1487 (2005)
[4] A. Fuhrer, C. Fasth, et al. Appl. Phys. Lett. 91, 052109 (2007)
[5] D. Wallin, A. Fuhrer, et al. Appl. Phys. Lett. 90, 172112 (2007)