Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 21: Symposium Semiconductor Nanowires

HL 21.3: Invited Talk

Tuesday, February 26, 2008, 16:15–16:45, ER 270

prismatic quantum heterostructures on MBE grown GaAs nanowires — •Anna Fontcuberta i Morral — Walter Schottky Institut, TU Muenchen, Garching, Germany

Semiconductor nanowires are believed to play a decisive role in the electronic and optoelectronic devices of the XXI century. Their synthesis is a rapidly expanding field, due to the expectations that nanoscale objects and their associated phenomena have to offer to basic and applied science. Here we report on a new method for the growth of GaAs nanowires and related prismatic quantum heterostructures using Molecular Beam Epitaxy (MBE), by avoiding the use of gold as seed for the nanowires. The use of Molecular Beam Epitaxy presents an additional interest, as this technique allows us to produce ultra-pure nanowires and quantum heterostructures on the nanowire facets with very high crystalline quality and atomically sharp interfaces. This new versatility of MBE in the growth of nanostructures opens great possibilities for the generation of novel devices with additional optical and electronic functionalities, as it has been previously shown in planar structures.