Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 22: Hybrid systems

HL 22.6: Vortrag

Dienstag, 26. Februar 2008, 10:45–11:00, EW 201

Real space imaging of the Fe/GaAs(110) interface with Cross-Sectional Scanning Tunneling Microscopy — •Lars Winking, Martin Wenderoth, Jan Homoth, Swante Sievers, and Rainer G. Ulbrich — IV. Phys. Inst., Georg-August-Universität Göttingen

The unique nearly lattice-matched system Fe on GaAs is a promising candidate for future spintronics applications. Spin-injection has already been demonstrated by several groups even though the obtained efficiencies are still limited [1,2]. It is assumed that this shortcoming is due to imperfections at the Fe/GaAs heterointerface, however up to now is not clear weather defects at the interface that lead to very leaky Schottky diodes [2], or the formation of a nonmagnetic interface compound are responsible [1]. In this contribution we present the first real space investigation of the Fe/GaAs(110) interface with Scanning Tunneling Microscopy across the cleaved interface. This new approach enables us to explore the structural as well as the electronic properties of the Fe/GaAs(110) interface with atomic resolution [3]. We can directly link the atomic structure of the heterointerface to spatially varying electronic properties like the local potential Φ in the GaAs space charge layer and the variation of the Schottky barrier height along the interface. This work was supported by the DFG-SFB 602 TP A7

[1] K. H. Ploog, JAP, 91, pp. 7256 (2002) [2] A. Hirohata et al., PRB 66, 035330 (2002) [3] T.C.G. Reusch et al., PRL 93, 206801(2004)