Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Spin controlled transport I
HL 25.1: Vortrag
Dienstag, 26. Februar 2008, 14:15–14:30, EW 202
Origins of the anisotropic magnetoresistance in GaMnAs — •Karel Vyborny1 and Tomas Jungwirth1,2 — 1Institute of physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, Praha 6, CZ–16253, Czech Republic — 2School of Physics and Astronomy, University of Nottingham,* Nottingham NG7 2RD, United Kingdom
The bandstructure of the magnetic semiconductor GaMnAs within the mean-field kinetic-exchange model is sufficiently simple so as to allow to open the blackbox of numerical simulations of the conductivity tensor. The full (six-band, non-spherical) model can be cut down to an analytically tractable one while the numerical results of the AMR (relative difference of resistance under two orientations of magnetisation) do not change qualitatively.
Our calculations are based on the Boltzmann semiclassical formula for conductivity. Results suggest that the scattering on Mn impurities is responsible for the sign and order of magnitude of the AMR which is dominantly of the non-crystalline type in GaMnAs.