Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 26: III-V semiconductors I

HL 26.3: Talk

Tuesday, February 26, 2008, 16:15–16:30, EW 202

Electronic properties of ferromagnetic (Ga,Mn)As from a tight-binding model — •Marko Turek, Jens Siewert, and Jaroslav Fabian — Universität Regensburg

We present the results of several numerical investigations of bulk (Ga,Mn)As based on a tight-binding approach. In particular we study the density of states, the absorption rate and the inverse participation ratio as a function of the concentration of substitutional Mn-disorder. We find that the impurity band merges with the valence band for Mn concentrations larger than ~1%. The Fermi-level lies within this impurity band. The impurity states show a significantly increased inverse participation ratio which reflects their localized character. This work is supported by the SFB 689.