Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 30: Quantum dots and wires: Transport properties II
HL 30.8: Vortrag
Dienstag, 26. Februar 2008, 16:15–16:30, ER 164
A GaAs/AlAs vertical resonant tunneling nano-transistor: processing and electrical characterization — Jakob Wensorra1, •Mihail Ion Lepsa1, Klaus Michael Indlekofer1,2, Arno Förster3, Hans Lüth1, and Detlev Grützmacher1 — 1Center of Nanoelectronic Systems for Information Technology (IBN-1), Forschungszentrum Jülich GmbH, 52425 Jülich — 2FH Wiesbaden, University of Applied Sciences, Information Technology and Electrical Engineering, Am Brückweg 26, D-65428 Rüsselsheim — 3FH Aachen, University of Applied Sciences and Technology, Ginsterweg 1, 52428 Jülich
For our experiment, vertical sub-100nm nanoculumns have been processed firstly, starting from an MBE grown GaAs/AlAs resonant tunneling heterostructure [1]. The top down approach is based on electron-beam (E-B) lithography of hydrogen silsesquioxan (HSQ), as mask material, and subsequent dry etching processes for the column definition. HSQ have been used also to planarize and isolate the device electrodes. Metallic gates have been positioned around the nanocolumns, at the level of the double barrier quantum well structure, by precise etching of the dielectric and E-B lithography, with alignment accuracy less then 8nm. The electrical transport properties of the resonant tunneling nano-transistors have been investigated using DC measurements at room temperature. Preliminary results indicate that the gate voltage modulates the peak current and the peak to valley current ratio in the device I-V characteristics. [1] J. Wensorra, K.M. Indlekofer, M.I. Lepsa, A. Förster, and H. Lüth, Nano Letters, 5, 2470 (2005).