Berlin 2008 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.10: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
TMR and highly anisotropic magnetoresistance effects in (Ga,Mn)As based trilayer structures — •Eva Brinkmeier1, Rashid Gareev1, Matthias Sperl1, Ursula Wurstbauer1, Janusz Sadowski2, Dieter Schuh1, Werner Wegscheider1, and Dieter Weiss1 — 1Institut fuer experimentelle und angewandte Physik, Universitaet Regensburg, Germany — 2Institute of Physics, Polish Acadamy of Sciences, Warsaw, Poland
We investigated tunneling trilayer structures built of (Ga,Mn)As as ferromagnetic electrode and GaAs or (Al,Ga)As as barrier materials. Tunnel stacks were fabricated for magnetoresistance measurements in a current-perpendicular-to-plane (CPP) geometry.
The Tunneling Magneto-Resistance (TMR) of the junctions shows a pronounced dependence on voltage and temperature. When the orientation of the magnetic field is being changed, a complex switching behaviour shows up which can be explained by the switching of the (Ga,Mn)As layers as it was also shown by previous studies for similar systems [1].
In trilayer systems containing a GaAs barrier a highly anisotropic junction resistance with respect to the orientation of a high external magnetic field appears. Detailed investigations of this tunneling anisotropic magnetoresistance show its strong dependence on voltage, temperature and strength of the applied magnetic field.
[1] Y. Higo et al. APL 89, 6745 (2001)