Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.14: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Local and remote bend resistance characteristics in the hot-electron regime — •Matthias Wiemann1, Ulrich Wieser1, Ulrich Kunze1, Dirk Reuter2, and Andreas D. Wiek2 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany
Nonlinear bend resistance characteristics are investigated in the hot-electron regime in a six-terminal mesoscopic ballistic GaAs/AlGaAs cross junction. The lateral geometry is given by a central orthogonal cross junction and two additional voltage probes which orthogonally merge into the vertical bar on both sides of the central junction. Non-equilibrium electrons are generated by a voltage drop across a gate-tunable quantum point contact (QPC) embedded in the vertical bar near the cross junction. If an input bias is applied between the vertical bar embedding the QPC and an orthogonal lead of the central cross junction, a negative bend resistance is found in the I-V transfer characteristic, where V describes the potential difference between the voltage probes opposite to the current leads (local configuration). The absolute value of the bend resistance enhances with increasing electron excess energy if the electrons are injected through the constriction. If the transfer voltage is detected between two orthogonal voltage probes far from the QPC (remote configuration) ballistic effects are observed only for small electron excess energies. Both, local and remote bend resistance characteristics show pronounced oscillations if the electrons are injected through the QPC constriction.