Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.21: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Top down processing and electrical characterisation of InAs nanocolumns — Jakob Wensorra1, •Sonja Heiderich1, Mihail Ion Lepsa1, Klaus Michael Indlekofer2, Hans Lüth1, and Detlev Grützmacher1 — 11Center of Nanoelectronic Systems for Information Technology (IBN-1), Forschungszentrum Jülich GmbH, D-52425 Jülich — 2FH Wiesbaden, University of Applied Sciences Information Technology and Electrical Engineering, Am Brückweg 26, D-65428 Rüsselsheim
Semiconductor nanocolumns and carbon nanotubes have attracted large interest in recent years both for fundamental and application oriented research. Especially, nanocolumns from low band gap semiconductor materials like InAs, with high electron mobility and a surface accumulation layer, are possible candidates for novel nanodevice concepts. We report on a reproducible top-down processing technique of vertical InAs nanocolumns. With the help of electron beam lithography and using high resolution Hydrogen Silsesquioxan (HSQ) as mask material, vertical InAs columns with lateral dimensions down to 50 nm have been realized by ion beam and reactive ion etching. HSQ is also used to planarize and physically isolate the devices. For contacting the nanocolumns, Ti/Au ohmic contacts have been processed. The electrical transport properties of the resulting nanostructures have been analyzed by means of DC measurements at room temperature. The I-V characteristics is ohmic and indicate a very low resistance for all processed InAs nanocolumns. A linear dependence of the resistance on the lateral nanocolumn dimension has been observed.