Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.22: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Spin dependent transport in a lateral few electron quantum dot — •Theo Ridder1, Maximilian C. Rogge1, Dirk Reuter2, Andreas D. Wieck2, and Rolf J. Haug1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Germany — 2Lehrstuhl für Angewandte Festkörperphysik, Ruhr Universität Bochum, Germany
We investigate spin blockade effects on a lateral few electron quantum dot and observe the influence of the injection of spin polarized currents.
Our quantum dot is built on a GaAs/AlGaAs heterostructure with a 2DEG 57 nm below the surface. For the fabrication of our device we use electron beam lithography. We measure the differential conductance depending on the magnetic field with standard lock-in technique in a 4He/3He dilution refrigerator at a base temperature of around 30 mK.
We investigate the dot properties showing that one can tune the dot from zero to more than 40 electrons. The proof of the last electron is given by Coulomb diamonds measurements. In addition we show spin blockade effects in the few electron regime.
Spin polarization can be achieved in high magnetic fields in using metallic gates covering the leads of the dot. We investigate the transport properties of our quantum dot with regard to spin polarized currents.